Name: Si_JCP_2017 Extended ID: Si_JCP_2017__Cubuk-Malone-Onat-Waterland-Kaxiras__DS_paehju6qhaym_0 Description: A dataset of 64-atom silicon configurations in four phases: cubic-diamond, (beta)-tin, R8, and liquid. MD simulations are run at 300, 600 and 900 K for solid phases; up to 2500 K for the L phase. All relaxations performed at zero pressure. Additional configurations prepared by random distortion of crystal structures. VASP was used with a PAW pseudopotential and PBE exchange correlation. k-point mesh was optimized for energy convergence of 0.5 meV/atom and stress convergence of 0.1 kbar. The plane wave energy cutoff was set to 300 eV. To reduce the correlation between data points MD, data were thinned by using one of every 100 consecutive structures from the MD simulations at 300 K and one of every 20 structures from higher temperature MD simulations. Authors: Ekin D. Cubuk Brad D. Malone Berk Onat Amos Waterland Efthimios Kaxiras DOI: 10.60732/68b1a5ad Calculated Property Types: atomic_forces energy Elements: Si (100.0%) Methods: DFT-PBE Software: VASP Number of Configurations: 1,110 Number of Atoms: 71,040 Publication Link: https://doi.org/10.1063/1.4990503 Data Source Link: https://doi.org/10.1063/1.4990503